English
Language : 

SED10HB45_1 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – SCHOTTKY RECTIFIER
Solid State Devices, Inc.
14701 Firestone Blvd. * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SED10HB45, SED10HE45
and SED10HF45
ELECTRICAL CHARACTERISTICS
Symbol
Instantaneous Forward Voltage Drop
(IF =5 ADC, 300-500 μsec Pulse)
Instantaneous Forward Voltage Drop
(IF =10 ADC, 300-500 μsec Pulse)
Instantaneous Forward Voltage Drop
(IF =20 ADC, 300-500 μsec Pulse)
Reverse Leakage Current
(Rated VR, 300 μsec pulse minimum)
Junction Capacitance
(TA = 25oC, f = 1 MHz)
TA = -55oC
VF1
TA = 25oC
VF2
TA = 125oC
VF3
TA = -55oC
VF4
TA = 25oC
VF5
TA = 125oC
VF6
TA = -55oC
VF7
TA = 25oC
VF8
TA = 125oC
VF9
TA = 25oC
IR1
TA = 100oC
IR2
TA = 125oC
IR3
VR = 5V
CJ1
VR = 10V
CJ2
CASE OUTLINE: SED10HB45
CASE OUTLINE: SED10HE45
Maximum Typical Unit
-
0.52
-
0.58
0.48
VDC
0.36
-
0.56
0.49
0.62
0.54
VDC
0.44
-
0.69
-
0.69
0.64
VDC
0.57
0.25
0.02
-
3
mA
25
18
900
-
780
580
pF
CASE OUTLINE: SED10HF45
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0002G
DOC