FT0042A Datasheet, PDF (2/3 Pages) Solid States Devices, Inc – Avalanche Rated P-MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Electrical Characteristics^4/
Drain to Source Breakdown Voltage
Drain to Source On State
Resistance
Gate Threshold Voltage
Gate to Source Leakage
Zero Gate Voltage Drain Current
Forward Transconductance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SFF110P05J
SFF110P05M
SFF110P05S1
Symbol
V_GS = 0V, I_D = 250μA
VVV_GGGSSS===1-1010V0VV,,I,I_DD^ID===--7-77000AAA,,,TTTjj=j==11225550^oooCCC
VVV_DDSDSS===VVV_GGSGS,_S,I,DIIDD===-101...2005mmmAAA,,,TTTjj=j==1-252555^oooCCC
VV_GSGS==±2±02V0V, T, ^Tj =j ^=12255ooCC
VV_DSDS==-5-05V0V, V, ^V_GSGS==0V0V, T, ^T_j =^{j =12255ooCC}
VVV_DDSDSS===--11-010V0VV,, I,I_DD^ID===--77-070A0AA,, T,TT_j ^j =^{j==1-224550ooo}CCC
V_GS = -10V
V_DS = -25V
I_D = -70A
V_GS = -10V
V_DS = -30V
I_D = -50A
R_G = 1.0Ω, pw= 3us
I_F = -70A, V_GS = 0V
I_F = -70A, di/dt = -100A/usec
V_GS = 0V
V_DS = 25V
f = 1 MHz
BV_DSS
R_DS(on)
V_GS(th)
I_GSS
I_DSS
g_fs
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_SD
t_rr
Q_rr
C_iss
C_oss
C_rss
Min Typ Max Units
-50 ––
––
––
9
14
––
14
22
––
15
––
-2.0 –– -4.0
2.0 ––
––
––
––
––
––
10 ±100
––
30
––
––
-10
––
-750
70
40
85
––
63
–– 200 350
––
50
-
–– 65
-
––
30
45
––
35
75
––
40 100
––
25
75
––
-
1.3
––
55 250
––
60
––
–– 13,500 ––
–– 1650 ––
–– 650 ––
V
mΩ
V
nA
μA
μA
Mho
nC
nsec
V
nsec
nC
pF
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0042A
DOC