FT0001 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – POWER MOSFET

SFF75N06-28
PRELIMINARY
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: [phone] * Fax: [phone]
ELECTRICAL CHARACTERISTICS @ T_J =25^oC (Unless Otherwise Specified)
RATING
SYMBOL MIN
TYP
Drain to Source Breakdown Voltage
(VGS =0 V, ID =250:A)
BV_DSS
60
-
Drain to Source
60% of Rated ID, T_C = 25^oC
-
23
ON State Resistance ^2/
(VGS = 10 V)
Rated ID, T_C = 25^oC R_DS(on)
-
60% of Rated ID, T_C = 150^oC
-
25
27
Gate Threshold Voltage
(VDS =VGS, ID =250:A)
Forward Transconductance
(VDS > ID(on) x RDS (on) Max,
IDS =60% rated ID)
V_GS(th)
2
-
gf_s
15
35
Zero Gate Voltage Drain Current
(VDS =80% rated VDS, VGS =0 V, T_A = 25^oC )
(VDS =80% rated VDS, VGS =0 V, T_A = 125^oC )
I_DSS
-
-
-
-
MAX
-
25
27
-
4
-
UNIT
V
mS
V
S(É)
10
100
:A
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
I_GSS
-
-
-
-
100
100
nA
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS =10 Volts
Qg
-
50% rated VDS
Qgs
-
Rated ID
Qgd
-
83
100
13
20
nC
40
55
Turn on Delay Time
Rise Time
Turn off DELAY Time
Fall Time
VDD =50%
t_{d (on)}
-
rated VDS
tr
-
rated ID
t_{d (off)}
-
RG = 6.2 S
tf
-
20
40
35
65
70
130
nsec
40
80
Diode Forward Voltage
(I_S = rated I_D, V_GS = 0V, T_J = 25^oC)
V_SD
-
1.47
1.6
V
Diode Reverse Recovery Time
Reverse Recovery Charge
TJ =25^oC
IF = 10A
t_rr
-
70
150
nsec
di/dt = 100A/:sec
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS =0 Volts
Ciss
-
VDS =25 Volts
Coss
-
f =1 MHz
Crss
-
2600
2900
700
1100
pF
260
275
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
NOTES:
1/ Die Rating: 75Amps.
2/ All package pins of the same terminations (Drain/Source/Gate) must be connected together to minimize
R_DS(on) and maximize current carrying capability.