FP0045E_15 Datasheet, PDF (2/3 Pages) Solid States Devices, Inc – POWER MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Electrical Characteristics ^4/
Drain to Source Breakdown Voltage
(V_GS = 0V, I_D = 250A)
Drain to Source On State Resistance
(V_GS = -10V, I_D = 60A)
Drain to Source On State Resistance
(V_GS = -10V, I_D = 30A)
Gate Threshold Voltage
(V_DS = V_GS, I_D = -250A)
Forward Transconductance
(V_DS > I_D(on) x R_DS(on) Max, I_Ds = 50% of Rated I_D)
Zero Gate Voltage Drain Current
(V_DS = 50 V, V_GS = 0V)
(V_DS = 40 V, V_GS = 0V)
Gate to Source Leakage (For
Gate to Source Leakage
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SFF60P05M
SFF60P05Z
Symbol Min
BV_DSS
-50
Typ Max Units
-70
–– Volts
R_DS(on)1
––
0.021 0.033

R_DS(on)2
––
0.021
––

V_GS(th)
-2.0
-2.8
-4.0 Volts
g_fs
––
50
––
S
T_A = 25^oC
T_A = 125^oC
At Rated V_GS
V_GS = -10V
V_DD = 40V
I_D = 60A
V_DD = 25 V
I_D = 30 A
R_L = 6.2
I_S = Rated I_D
V_GS = 0V
T_J = 25ºC
I_F = 10A
di/dt = 100A/usec
V_GS = 0V
V_DS = -25V
f = 1 MHz
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_(on)
t_d(on)
t_r
t_(off)
t_d(off)
t_f
V_SD
t_rr
Q_rr
C_iss
C_oss
C_rss
–– 0.005 1
––
––
50
A
––
––
-10
10
-100
100
A
––
200 300
––
20
50
nC
––
80
125
––
––
125
––
40
––
––
20
––
ns
––
––
225
––
90
––
––
60
––
––
-1.3 -1.9 Volts
––
140 200
ns
––
––
––
C
–– 6000 ––
–– 1800 ––
pF
––
500
––
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FP0045E
DOC