F00247_15 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – POWER MOSFET

SFF70N10M
SFF70N10Z
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
ELECTRICAL CHARACTERISTICS @ T_J =25^oC (Unless Otherwise Specified)
RATING
Drain to Source Breakdown Voltage
(VGS =0 V, ID = 250µA)
SYMBOL MIN
TYP
MAX UNIT
BV_DSS
100
-
-
V
Drain to Source on State Resistance
(VGS = 10 V,Tc = 150^oC)
R_DS(on)
-
0.025
0.03
Ω
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10 V)
I_D(on)
70
Gate Threshold Voltage
(VDS = VGS, ID = 250µA)
Forward Transconductance
(VDS > ID(on) X RDS (on) Max, IDS=60% rated ID)
V_GS(th)
2
gf_s
20
Zero Gate Voltage Drain Current
(V_DS = 80% rated voltage, V_GS = 0V)
(V_DS = 80% rated V_DS, V_GS = 0V, T_A = 125^oC)
I_DSS
-
-
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
I_GSS
-
-
-
-
A
-
4.0
V
40
-
Smho
-
-
250
250
µA
-
-
+100
-100
nA
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off DelayTime
Fall Time
Diode Forvard Voltage
(I_S = rated I_D, V_GS = 0V, T_J = 25^oC)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 10 V
Qg
-
80% rated VDS
Qgs
-
Rated ID
Qgd
-
VDD =50%
t_{d (on)}
-
rated VDS
tr
-
ID=70A
RG=8Ω
t_{d (off)}
-
VGS=10V
tf
-
110
140
30
40
nC
50
80
25
40
15
80
180
100
nsec
15
40
V_SD
-
1.0
1.8
V
TJ =25^oC
IF = ID
di/dt = 100A/µsec
t_rr
Q_RR
-
1.25
200
nsec
0.3
-
µC
VGS =0 Volts
Ciss
-
4100
-
VDS =25 Volts
Coss
-
1200
-
pF
f =1 MHz
Crss
-
310
-
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
NOTES:
1/ Maximum current limited by package, die rated at 70A.