F00165H_15 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – Avalanche Rated N-channel MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Electrical Characteristics ^5/
Drain to Source Breakdown Voltage
Drain to Source On State
Resistance
Gate Threshold Voltage
Gate to Source Leakage
Zero Gate Voltage Drain Current
Forward Transconductance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Current
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SFF27N50M
SFF27N50Z
Symbol
V_GS = 0V, I_D = 250μA BV_DSS
VV_GGSS==1100VV,,II_DD==1188AA,,TTj=j=12255^ooCC
VVV_DDSDSS===VVV_GGSGS,^S_,I,IDD^ID===44.4.00.m0mmAAA,,T,TTj=j=j=1-225555^oooCCC
VV_GSGS==±2±02V0V, T, ^Tj=j=12255ooCC
VV_DSDS==550000VV, ^,VV_GSGS==00VV, ^,TT_j =^{j =12255ooCC}
V_DS = 20V, I_D = 18A, T_j = 25^oC
V_GS = 10V
V_DS = 250V
I_D = 18A
V_GS = 10V
V_DS = 250V
I_D = 35A
R_G = 3.0Ω, pw= 3us
I_F = 35A, V_GS = 0V
I_F = 25A, di/dt = 100A/usec
V_GS = 0V
V_DS = 25V
f = 1 MHz
R_DS(on)
V_GS(th)
I_GSS
I_DSS
g_fs
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_SD
t_rr
I_RM
Q_rr
C_iss
C_oss
C_rss
Min
500
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3.0
2.0
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15
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Typ Max Units
510 ––
V
150
400
4.0
3.0
5.0
10
30
0.01
5.0
35
75
25
25
55
30
65
25
0.95
180
8.0
0.85
4700
540
20
175
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5.0
––
6
±100
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25
500
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150
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75
50
150
50
1.5
250
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mΩ
V
nA
μA
μA
Mho
nC
nsec
V
nsec
A
μC
pF
Available Part Numbers:
Consult Factory
TO254 (M)
PIN ASSIGNMENT (Standard)
Package
Drain Source Gate
TO-254 (M)
Pin 1
Pin 2
Pin 3
TO-254Z (Z)
Pin 1
Pin 2
Pin 3
TO254Z (Z)
PIN 3
PIN 2
PIN 1
PIN 3
PIN 2
PIN 1
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00165H
DOC