F00129H Datasheet, PDF (2/3 Pages) Solid States Devices, Inc – MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Electrical Characteristics^5/
Drain to Source Breakdown Voltage
Drain to Source On State
Resistance
Gate Threshold Voltage
Gate to Source Leakage
Zero Gate Voltage Drain Current
Forward Transconductance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SFF80N20 Series
V_GS = 0V, I_D = 250μA
VVV_GGSGSS===11010V0VV,,I,_D^IIDD===44848A8AA,,T,TTj=j=j=11272555^oooCCC
VVV_DDSDSS===VVV_GGSGS,^S_,I,IDD^ID===44.4.00.m0mmAAA,,T,TTj=j=j=1-225555^oooCCC
VV_GSGS==±2±02V0V, T, ^Tj=j=12255ooCC
VVV_DDSSDS===222000000VVV,, ^,VVV_GGSSGS===000VVV,, ^,TTT_jj ==^{j =11225550oooCCC}
V_DS = 10V, I_D = 48A, T_j = 25^oC
V_GS = 10V
V_DS = 100V
I_D = 48A
V_GS = 10V
V_DS = 100V
I_D = 48A
R_G = 4.0Ω, pw= 3us
I_F = 48A, V_GS = 0V
I_F = 10A, di/dt = 100A/usec
I_F = 10A, di/dt = 100A/usec
I_F = 10A, di/dt = 100A/usec
I_F = 25A, di/dt = 100A/usec
I_F = 25A, di/dt = 100A/usec
I_F = 25A, di/dt = 100A/usec
V_GS = 0V
V_DS = 25V
f = 1 MHz
Symbol
BV_DSS
R_DS(on)
V_GS(th)
I_GSS
I_DSS
g_fs
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_SD
t_rr1
I_rm1
Q_rr1
t_rr2
I_rm2
Q_rr2
C_iss
C_oss
C_rss
Min
200
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2.5
1.5
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25
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Typ
220
25
50
65
4.5
3.6
5
10
30
0.01
2.5
25
50
150
45
75
50
50
110
50
0.90
190
11
1
310
17
2.5
5300
1050
175
Max
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30
65
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5.0
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6
±100
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25
150
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250
65
120
75
75
135
75
1.5
250
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Units
V
mΩ
V
nA
μA
μA
μA
Mho
nC
nsec
V
nsec
A
μC
nsec
A
μC
pF
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00129H
DOC