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F00111C Datasheet, PDF (2/3 Pages) Solid States Devices, Inc – N-Channel Power MOSFET
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SFF240J
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 4/
SFF240JR
Symbol Min Typ Max
Drain to Source Breakdown Voltage
Drain to Source On State Resistance
VGS= 0 V, ID= 1 mA
VGS= 10 V, ID= 11 A, TJ= 25°C
VGS= 10 V, ID= 11 A, TJ=125°C
VGS= 10 V, ID= 18 A, TJ= 25°C
On State Drain Current
VDS > ID(on) x RDS(on) Max, VGS= 10 V, TJ= 25°C
Gate Threshold Voltage
VDS= VGS, ID= 250 μA, TJ= 25°C
VDS= VGS, ID= 250 μA, TJ= 125°C
VDS= VGS, ID= 250 μA, TJ= -55°C
Forward Transconductance
VDS ≥ 10 V, IDS= 10 A, TJ= 25°C
Zero Gate Voltage
Drain Current
VDS= max rated voltage, VGS= 0 V, TJ= 25°C
VDS= max rated voltage, VGS= 0 V, TJ= 125°C
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS, TJ= 25°C
At rated VGS, TJ= 125°C
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS= 10 V
VDS= 100 V
Rated ID
VDD= 100 V
ID= 11 A
RG= 9.1 Ω
VGS= 10 V
IS= Rated ID, VGS= 0 V, TJ= 25°C
TJ= 25°C, IF= Rated ID, di/dt= 100 A/μsec
VGS= 0 V
VDS= 25 V
f= 1 MHz
BVDSS
RDS(on)
ID(on)
VGS(th)
gfs
IDSS
IGSS1
IGSS2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Ciss
Coss
Crss
200 220 ––
–– 0.13 0.18
–– 0.25 0.48
–– 0.135 0.25
15
––
––
2.0 3.0 4.0
1.0 2.2 ––
–– 3.5 ––
6.5 10 ––
–– 0.02 25
––
10 250
––
10 100
––
10 -100
––
10 200
––
10 -200
––
50
60
––
12
15
––
30
38
––
20
30
––
40
90
––
55
75
––
30
50
––
–– 1.5
–– 290 500
–– 2.6 5.3
–– 1200 ––
–– 450 ––
–– 150 ––
Units
V
Ω
A
V
S (Ʊ)
μA
nA
nC
nsec
V
nsec
μC
pF
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00111C
DOC
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