F00029_15 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – N-Channel POWER MOSFET

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Electrical Characteristics @ T_J = 25ºC
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250 µA)
Drain to Source On State Resistance
(VGS=10 V, ID=50% Rated ID)
On State Drain Current
(VDS>ID(on) X RDS(on) Max, VGS=10V, ID= rated ID)
Gate Threshold Voltage
(VDS=VGS, ID= 250µA)
Forward Transconductance
(VDS>ID(on) X RDS(on) Max, IDS= 60% Rated ID)
Zero Gate Voltage Drain Current
(VDS=max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=150ºC)
Symbol
BV_DSS
R_DS(on)1
R_AS(on)2
V_GS(th)
g_fs
I_DSS
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
I_GSS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS=10 Volts
Q_g
60% rated VDS
Q_gs
60% Rated ID
Q_gd
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
VDD=50% Rated VDS
60% Rated ID
RG= 6.2Ω
VGS=10 Volts
td(on)
tr
td(off)
tf
Diode Forward Voltage
(IS= Rated ID, VGS=0 V, TJ=25ºC)
V_SD
Diode Reverse Recovery Time
Reverse Recovery Charge
T_J=25ºC
IF=10A
Di/dt=100A/µsec
t_rr
Q_RR
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
VGS=0 Volts
VDS=25 Volts
f=1 MHz
C_iss
C_oss
C_rss
SFF140J
SFF140JBW
Min
100
––
2.0
8.7
––
––
––
––
––
––
––
––
––
––
––
––
––
0.44
––
––
––
Typ
––
0.067
––
2.4
13
––
––
––
––
40
8
19
15
72
40
50
1.3
150
0.91
1750
575
125
Max Units
––
Volts
0.077
Ω
0.125
A
4.0
V
–– S(mho)
25
250
µA
+100
-100
75
12
35
23
110
60
75
2.5
nA
nC
nsec
V
400
nsec
1.9
nC
––
––
pF
––
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00029C
DOC