F00002_15 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – N-Channel Power MOSFET

SFF70N04
SERIES
ELECTRICAL CHARACTERISTICS ^4/
Drain - Source Breakdown Voltage
(V_GS = 0V, I_D = 250µA)
Gate Threshold Voltage
(V_DS = V_GS, I_DS = 250µA)
Gate - Emitter Leakage Current
(V_DS = 0V, V_GS = +20V)
Zero Gate Voltage Drain Current
(V_DS = 40V, V_GS = 0V)
On-State Drain Current *
(V_DS = 5V, V_GS = 10V)
Drain-Source On-State Resistance *
V_GS = 10V, I_D = 30A
V_GS = 4.5V, I_D = 20A
T_J = 25^oC
T_J = 125^oC
T_J = 25^oC
T_J = 125^oC
T_J = 25^oC
T_J = 125^oC
Forward Transconductance *
(V_DS = 15V, I_D = 30A)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_DS = 25V,
V_GS = 0V,
f = 1MHz
Total Gate Charge
Gate - Source Charge
Gate - Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V_DS = 15V,
V_GS = 10V,
I_D = 70A
V_DD = 15V, I_D = 70A,
V_GEN = 10V,
R_L = 0.2Ω, R_G = 2.5Ω
Reverse Diode Forward Voltage Drop
(I_F = 70A, V_GS = 0V)
Reverse Diode Reverse Recovery Time
(I_F = 70A, di/dt = 100A/µs)
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
SYMBOL
MIN
TYP
MAX UNITS
V_(BR)DSS
40
-
-
V
V_{GS (th)}
1
-
3
V
I_GSS
-
I_DSS
-
-
I_D(on)
70
-
E 100
nA
-
-
1
50
µA
-
-
A
R_DS(on)
g_fs
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_F
t_RR
-
0.008
0.010
-
-
0.014
0.011
0.017
0.014
Ω
-
0.019
0.024
20
57
-
S
-
2700
-
pF
-
600
-
pF
-
160
-
pF
-
50
100
nC
-
10
-
nC
-
9
-
nC
-
14
30
nsec
-
12
30
nsec
-
58
100
nsec
-
30
60
nsec
-
1.0
1.5
V
-
50
100
nsec
NOTES:
* Pulse Test: Pulse Width = 300us, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability, Contact Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines Contact Factory.
4/ All Electrical Characteristics @25^oC, Unless Otherwise Specified.
5/ Current Limited by Package, Die Rated at 70A
Available Part Numbers:
SFF70N04S.5
PIN ASSIGNMENT
PACKAGE Drain Source
SMD.5
Pin1
Pin 2
Gate
Pin 3