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TR0114A Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – High Voltage – High Energy NPN Transistor | |||
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNERâS DATA SHEET
Part Number / Ordering Information 1/
SPT6693__
â Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
SPT6693
15 AMPS
400 Volts
High Voltage â High Energy
NPN Transistor
Features:
⢠Collector to Base Voltage 650 V Min
⢠High Power, 175 Watts
⢠High Gain, Low Saturation
⢠200oC Operating Temperature
⢠Isolated Package with Low Theta
⢠Equivalent to MIL-PRF-19500/538
⢠TX, TXV, S-Level Screening Available.
Consult Factory.
Maximum Ratings
Collector â Emitter Voltage
Collector â Base Voltage
Emitter â Base Voltage
Collector Current
Base Current
Total Power Dissipation @ TC = 25ºC
Derate above 25ºC
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
TOP & TSTG
R0JC
Value
400
650
8
15
7
175
1
-65 to +200
1.0
Units
Volts
Volts
Volts
Amps
Amps
Watts
W/ºC
ºC
ºC/W
Notes:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For ordering information, price, and availability, contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
TO-61 (/61)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0114A
DOC
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