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TR0015H Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – PNP Power Transistor
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFT5553A __ __ __ __
│ │ │ └ Screening 2/
││ │
││ │
││ │
││ │
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│ │ └ Polarity __ = Normal
││
R = Reverse
│ └ Lead Bend Options
│
__ = Normal
│
UB = Up Bend
│
DB = Down Bend
SB = S Bend
└ Package G = Cerpack
J = TO-257
SFT5553A
Series
5 AMP
100 Volts
PNP Power Transistor
Features:
 BVCEO 80V
 Fast Switching
 Very High Gain
 Low Saturation Voltage
 200 ºC Operating Temperature
 Gold Eutectic Die Attach
 TX, TXV, S-Level Screening Available
Maximum Ratings
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
Power Dissipation @ TC ≤ 100ºC
(Derate above 100ºC)
Operating & Storage Temperature
Thermal Resistance, Junction to Case
Cerpack
TO-257
Cerpack
TO-257
Symbol
BVCBO
BVCEO
BVEBO
IC
IB
PD
Top & Tstg
RθJC
Value
100
80
6.0
5.0
2.0
40 (0.4)
20 (0.2)
-65 to +200
2.5
5
Units
Volts
Volts
Volts
Amps
Amps
W
(W/ ºC)
ºC
ºC/W
Notes:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For ordering information, price, and availability, contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available
on request.
3/ Unless otherwise specified, all electrical characteristics @25ºC.
Cerpack
TO-257
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0015H
DOC