TG0004B_15 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – Fast Power IGBT

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number/Ordering Information^1/
SSG60N60 ___ ___ ___
│
│
└ ^Screening2/
││
__ = Not Screened
││
││
TX = TX Level
TXV = TXV
S = S Level
│ └ Lead Bend^3/
│
__ = Straight
│
│
└
UB = Up Bend
DB = Down Bend
Package
N = TO-258, Isolated
P = TO-259, Isolated
S2 = SMD2
SSG60N60 Series
85 AMP / 600 Volts
Fast Power IGBT
Features:
 600V IGBT technology
 Positive temperature coefficient for ease of paralleling
 High current switching for motor drives and inverters
 Low saturation voltage at high currents
 Low switching losses
 High short circuit capability
 MOS input, voltage controlled
 Hermetic sealed construction
 TX, TXV, S-level screening available
Maximum Ratings
Collector – Emitter Voltage
Continuous Collector Current
Average Diode Current
Peak Collector Current
Gate – Emitter Voltage
Operating & Storage Temperature
Total Device Dissipation
Thermal Resistance
Junction to Case
TO-258 (N)
@ T_C = 25ºC
@ T_C = 100ºC
@ T_C = 25ºC
N, P
S2
Symbol
V_CEO
I_C
I_C(pk)
V_GE
T_J & T_STG
P_D
R_0JC
TO-259 (P)
Value
600
85
60
200
±20
-65 to +200
350
1.0
0.75
SMD2 (S2)
Units
V
A
A
V
ºC
W
ºC/W
NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Up and down bend configurations available for TO-258 (N) and TO-259 (P) packages only.
4/ Unless otherwise specified, all electrical characteristics @25^oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TG0004B
DOC