SSR30C120S1 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 30 A / 1200 V Schottky Silicon Carbide Rectifier

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information ^1/
SSR30C __ __ __
│
│ └ Screening ^2/ __ = Not Screened
││
TX = TX Level
││
TXV = TXV
││
S = S Level
│ └ Package S1 = SMD1
│
└ Voltage 100 = 1000 V
120 = 1200 V
SMD1
SSR30C100S1
&
SSR30C120S1
30 A / 1200 V
Schottky Silicon Carbide
Rectifier
FEATURES:
• 1200 Volt Silicon Carbide Schottky Rectifier
• Average Output Current 30 Amps
• No Reverse Recovery
• No Forward Recovery
• No Switching Time Change Over
Temperature
• Small Package Size
• TX, TXV, and Space Level Screening
Available. ^2/ Consult Factory.
MAXIMUM RATINGS ^3/
Peak Repetitive and Peak Reverse Voltage
Average Rectified Forward Current ^4/
(Resistive Load, 60 Hz, Sine Wave)
Peak Surge Current ^4/
(8.3 ms Pulse, Half Sine Wave, T_A = 25^oC)
Operating & Storage Temperature
Junction Temperature
Maximum Thermal Resistance ^4/
(Junction to Case)
SSR30C100S1
SSR30C120S1
Total
Total
Total
Symbol
V_RRM
V_R
I_O
I_FSM
T_OP & T_stg
T_J
R_θJC
Value
1000
1200
30
120
-55 to +250
-55 to +250
0.8
Units
Volts
Amps
Amps
o_C
o_C
o_C/W
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC
4/ Terminal Pads 1 & 3 Must be connected together for testing and at the Board Level.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0043B
DOC