SSR20C30CT Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 20A / 300V Schottky Silicon Carbide Centertap Rectifier

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SSR20C 30 CT S.5 TX
│ │ │ └ Screening __ = Not Screened
│││
TV = TX Level
│││
TXV= TXV Level
│││
S = S Level
│ │ └ Package ^2/ S.5 = SMD.5
││
G = Cerpack
J = TO-257
│ └ Configuration CT = Centertap
│
└ Voltage 20 = 200 V
30 = 300 V
World’s First Silicon Carbide
Centertap Rectifier
SSR20C30CT Series
20A / 300V
Schottky Silicon Carbide
Centertap Rectifier
Features:
• World's 1st Hermetic 20A SiC Centertap Rectifier
• High Voltage 300V
• Very High Operating Temperature, 250ºC
• No Recovery Time (tfr or trr)
• High Current Operation, 20A
• Hermetic Packaging
• TX, TXV, S Level Screening Available
Maximum Ratings
Peak Repetitive and Peak Surge Reverse
Voltage
SSR20C20CT
SSR20C30CT
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave)
Per Leg
Total
Non Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on I_O, per leg)
Power Dissipation
Symbol
V_RRM
V_RSM
Io
I_FSM
P_D
Value
200
300
10
20
18
30
Units
Volts
Amps
Amps
Watts
Operating & Storage Temperature
T_OP & T_stg
-55 to +250
ºC
Maximum Thermal Resistance
Junction to Case
1
Cerpack (G)
SMD .5 (S.5)
R_θJC
2.2
TO-257 (J)
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0028D
DOC