SSR20C Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – Schottky Silicon Carbide

SSR20C Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information ^1/
SSR20C __ __ __ __
│ │ │ └ Screening ^2/ __ = Not Screened
│││
TX = TX Level
│││
│││
TXV = TXV
S = S Level
│ │ └ Package
││
S = SMD1
M = TO-254
│ └ Configuration CT = Centertap
│
└ Voltage 100 = 1000 V
120 = 1200 V
20 A / 1200 V
Schottky Silicon Carbide
Centertap Rectifier
FEATURES:
• 1200 Volt Silicon Carbide Schottky Rectifier
• Average Output Current 20 Amps
• No Reverse Recovery
• No Forward Recovery
• No Switching Time Change Over
Temperature
• Small Package Size
• TX, TXV, and Space Level Screening
Available. Consult Factory.
MAXIMUM RATINGS^3/
Peak Repetitive and Peak Reverse Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T_A = 25^oC)
Operating & Storage Temperature
Junction Temperature
Maximum Thermal Resistance
(Junction to Case)
SMD1 (S)
SSR20C100CT
SSR20C120CT
Per Leg
Total
Symbol
V_RRM
V_R
I_O
I_FSM
T_OP & T_stg
T_J
R_θJC
TO-254 (M)
Value
1000
1200
10
20
120
-55 to +250
-55 to +250
1.0
Units
Volts
Amps
Amps
o_C
o_C
o_C/W
NOTES:
* Pulse Test: Pulse Width = 300 μsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0049B
DOC