SSR10C30 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 10A / 300V Schottky Silicon Carbide

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SSR10C 30 S.5 TX
│ │ │ └ Screening __ = Not Screened
││ │
TV = TX Level
││ │
TXV= TXV Level
││ │
S = S Level
│ │ └ Package ^2/ S.5 = SMD.5
││
G = Cerpack
│ └Configuration
│
└ Voltage 20 = 200 V
30 = 300 V
World’s First Silicon Carbide
SSR10C30 Series
10A / 300V
Schottky Silicon Carbide
Features:
• World's 1st Hermetic 10A SiC
• High Voltage 300V
• Very High Operating Temperature, 250ºC
• No Recovery Time (tfr or trr)
• High Current Operation, 10A
• Hermetic Packaging
• TX, TXV, S Level screening available
Maximum Ratings
Peak Repetitive and Peak Surge Reverse Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave)
Non Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on I_O)
Power Dissipation
SSR10C20
SSR10C30
Symbol
V_RRM
V_RSM
Io
I_FSM
P_D
Value
200
300
10
18
15
Units
Volts
Amps
Amps
Watts
Operating & Storage Temperature
Top & Tstg
-55 to +250
ºC
Maximum Thermal Resistance
Junction to Case
1
Cerpack (G)
R_θJC
SMD .5 (S.5)
4.4
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0032B
DOC