SSG60N60 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 85 AMP 600 VOLTS FAST POWER IGBT

SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER'S DATA SHEET
Part Number /Ordering Information ^1/
SSG60N60 N _ TX
Screening ^2/: _ = Not Screened
TX = TX Level
TXV = TXV Level
S = Space Level
Lead Bend ^3/4/_ = Straight
UB = Up Bend
DB = Down Bend
Package: ^3/ N = TO-258, Isolated
P = TO-259, Isolated
S2 = SMD2
MAXIMUM RATINGS
Collector-Emitter Voltage
Continuous Collector Current
Average Diode Current
@ T_C = 25^oC
@ T_C = 100^oC
Peak Collector Current
Gate Emitter Voltage
Operating and Storage Temperature
Total Device Dissipation @ T_C = 25^oC
Thermal Resistance,
N, P
Junction to Case
S2
TO-258 (N)
TO-259 (P)
SSG60N60
SERIES
85 AMP
600 VOLTS
FAST
POWER IGBT
APPLICATION NOTES:
• 600V IGBT Technology
• Positive Temperature Coefficient for Ease of
Paralleling
• High Current Switching for Motor Drives and
Inverters
• Low Saturation Voltage at High Currents.
• Low Switching Losses.
• High Short Circuit Capability
• MOS Input, Voltage Controlled.
• Hermetic Sealed Construction.
• TX, TXV, and S-Level Screening Available.
SYMBOL
V_CEO
I_C
VALUE
600
85
60
I_C(pk)
200
V_GE
T_J, T_STG
P_D
R_θJC
+20
-65 to +200
350
0.5
0.4
SMD2 (S2)
UNITS
Volts
Amps
Amps
Volts
o_C
W
o_C/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TG0004A