SSG55N60_1 Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – 1.65 V saturation ultrafast IGBT

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number/Ordering Information ^1/
SSG55N60 ___ ___
│ └ Screening ^2/
│
__ = Not Screened
│
TX = TX Level
TXV = TXV
│
S = S Level
└ Package Type
M = TO-254
Z = TO-254Z
N = TO-258
P = TO-259
SSG55N60 series
55 AMP /600 Volts
1.65 V saturation
ultrafast IGBT
Features:
• Lowest ON-resistance in the industry
• Hermetically Sealed, Isolated Package
• Low Total Gate Charge
• Fast Switching
• TX, TXV, S-Level screening available
Maximum Ratings
Collector – Emitter Breakdown Voltage
Gate – Emitter Voltage
Max. Continuous Collector Current
Max. Instantaneous Drain Current (Tj limited)
Clamped Inductive Load current
Repetitive Reverse Voltage Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance (Junction to Case)
TO-254 (M)
TO-254Z (Z)
@ T_C = 25ºC
@ T_C = 100ºC
@ T_C = 25ºC
L= 10 uH
Limited by Tj max
@ T_C = 25ºC
Symbol
V_CES
V_GE
I_D1
I_D2
I_D3
I_LM
E_ARV
P_D
T_OP & T_STG
R_0JC
Value
600
±20
55
27
200
200
20
195
-55 to +150
0.64 (typ 0.35)
TO-258 (N)
TO-259 (P)
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25^oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TG0005B
DOC