English
Language : 

SSG42N60 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 50 AMP 600 VOLTS FAST POWER IGBT
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER'S DATA SHEET
Part Number /Ordering Information 1/
SSG42N60 N _ TX
Screening 2/: _ = Not Screened
TX = TX Level
TXV = TXV Level
S = Space Level
Lead Bend 3/4/_ = Straight
UB = Up Bend
DB = Down Bend
Package: 3/ N = TO-258, Isolated
P = TO-259, Isolated
S2 = SMD2
MAXIMUM RATINGS
Collector-Emitter Voltage
Continuous Collector Current
Average Diode Current
Peak Collector Current
@ TC = 25oC
@ TC = 90oC
@ TC = 25oC
Gate Emitter Voltage
Operating and Storage Temperature
Total Device Dissipation @ TC = 25oC
Thermal Resistance,
N, P
Junction to Case
S2
TO-258 (N)
TO-259 (P)
SSG42N60
SERIES
50 AMP
600 VOLTS
FAST
POWER IGBT
APPLICATION NOTES:
• 600V IGBT Technology
• Positive Temperature Coefficient for Ease of
Paralleling
• High Current Switching for Motor Drives and
Inverters
• Low Saturation Voltage at High Currents.
• Low Switching Losses.
• High Short Circuit Capability
• MOS Input, Voltage Controlled.
• Ultra Fast Free Wheeling Diodes
• Hermetic Sealed Construction.
• TX, TXV, and S-Level Screening Available.
SYMBOL
VALUE
UNITS
VCEO
IC
IO
IC(pk)
IIFSM
VGE
TJ, TSTG
PD
RθJC
600
70
42
40
140
300
E20
-65 to +200
200
0.8
0.7
Volts
Amps
Amps
Volts
oC
W
oC/W
SMD2 (S2)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TG0002A