SSG200EF60E Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 200 AMP N-CHANNEL IGBT WITH ANTI-PARALLEL DIODE 600 VOLTS

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number/Ordering Information ^1/
SSG200EF60E
___
└
Screening ^2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
SSG200EF60E
200 AMP
N-CHANNEL IGBT
WITH ANTI-PARALLEL DIODE
600 VOLTS
Features:
• Outstanding current capability
• Low on-state conductive losses
• Very simple gate drive design
• Improved SOA characterization
• Low input capacitance
• High reverse voltage rating available
• TX, TXV, S-Level screening available
MAXIMUM RATINGS^3/
Collector – Emitter Breakdown Voltage
Gate – Emitter Voltage
Max. Continuous Collector Current
Pulsed Collector Current^4/
Clamped Inductive Load Current (T_J = 125ºC)^5/
Reverse Voltage Avalanche Energy (I_C = 100A)^4/
Operating & Storage Temperature
Maximum Thermal Resistance (Junction to Case)
Total Device Dissipation @ T_C = 25ºC
Dissipation Derating From @ T_C = 25ºC to T_C = 150ºC
@ T_C = 25ºC
@ T_C = 90ºC
SYMBOL
V_CES
V_GES
I_C1
I_C2
I_CM
I_LM
E_ARV
T_OP & T_STG
R_0JC
P_D1
P_D2
NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25^oC.
4/ Pulse duration limited by TJmax; repetitive rating.
5/ VCC=80% rated BVCES, VGE=15V, L=30uH, RG=10Ω.
VALUE
600
±20
200
100
300
100
5.6
-55 to +150
0.20
625
5
Milpack 3
UNIT
V
V
A
A
A
mJ
ºC
ºC/W
W
W/ºC
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: G00003B
DOC