SPT6693 Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – High Voltage – High Energy NPN Transistor

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SPT6693__
└ Screening ^2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
SPT6693
15 AMPS
400 Volts
High Voltage – High Energy
NPN Transistor
Features:
• Collector to Base Voltage 650 V Min
• High Power, 175 Watts
• High Gain, Low Saturation
• 200^oC Operating Temperature
• Isolated Package with Low Theta
• Equivalent to MIL-PRF-19500/538
• TX, TXV, S-Level Screening Available.
Consult Factory.
Maximum Ratings
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T_C = 25ºC
Derate above 25ºC
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
P_D
T_OP & T_STG
R_0JC
Value
400
650
8
15
7
175
1
-65 to +200
1.0
Units
Volts
Volts
Volts
Amps
Amps
Watts
W/ºC
ºC
ºC/W
Notes:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For ordering information, price, and availability, contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
TO-61 (/61)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0114A
DOC