SHA489 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – IGBT REPLACEMENT ULTRA FAST SWITCHING DEVICE 200 Amps 250 Volts 1000 Watts

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Designer’s Data Sheet
FEATURES:
• Power Dissipation 1 kW @ 25^oC Case
• Extremely Large SOA
• Ultra Fast Switching, ts = 100 ns typical
(Outperforms IGBT)
• OFHC Copper Package
• Ideal for Motor Control/Power Systems
• Extremely Low R_θJC: 0.1^oC/W
• Can Be Driven From Low Level Logic
• Higher Current and Voltages Available. Consult
Factory
• Alternate Packages Available. Consult Factory.
• TX, TX-V, and S-Level Screening Available.
Consult Factory.
SHA489
IGBT REPLACEMENT
ULTRA FAST SWITCHING DEVICE
200 Amps
250 Volts
1000 Watts
MAXIMUM RATINGS
Output Voltage (Collector – Emitter)
Out/In Isolation (Collector – Gate)
Input Voltage (Gate – Emitter)
Current Sink Capabilities (peak)
Input Current (transistor switched off)*
Total Device Power Dissipation @ T_C = 25ºC
Derate above 75ºC
Storage Temperature
THERMAL CHARACTERISTICS
Thermal Resistance
(Junction – Case) Power Section
ELECTRICAL CHARACTERISTICS
Output Breakdown (Collector – Emitter)
Out/In Isolation (Collector – Gate)
Input Breakdown Voltage
Output Leakage Current
Symbol
V_3-1
V_3-2
V_2-1
I₃
I₂
P_D
T_stg
Symbol
R_θJC
Value
250
250
±20
200
-5
1000
8
-55 to +150^oC
Units
V
V
V
A
A
W
W/ºC
ºC
Value
0.1
Units
ºC/W
Symbol
(I₃ = 10 mA, V_2-1 = -4 V)
(I₃ = 300 µA, I₁ = 0 V)
(I₁ = -100 µA, I₃ = 0 V)
(I₁ = 100 µA, I₃ = 0 V)
(V_2-1 = -4 V, V_3-1 ≤ 250 V)
BV_3-1
BV_3-2
BV_2-1
I₃
Min
250
250
19
-8
––
Max
––
––
22
––
5
Units
Volts
Volts
Volts
mA
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: PM0020A
DOC