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SFX9130J Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 10 AMP /100 Volts 300 mOMH P-Channel MOSFET | |||
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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNERâS DATA SHEET
TO-257
SFX9130J
10 AMP /100 Volts
300 mâ¦
P-Channel MOSFET
Maximum Ratings
Drain - Source Voltage
Gate â Source Voltage
Max. Continuous Drain Current (package limited)
Max. Avalanche current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
PACKAGE OUTLINE:
TO-257 (J)
PINOUT:
PIN 1: DRAIN
PIN 2: SOURCE
PIN 3: GATE
Features:
⢠Rugged construction with polysilicon gate
⢠Low ON-resistance and high
transconductance
⢠Excellent high temperature stability
⢠Hermetically Sealed, Isolated Package
⢠Low Total Gate Charge
⢠Fast Switching
⢠replacement for IRF9130 types
⢠TX, TXV, S-Level screening available
@ TC = 25ºC
@ TC = 100ºC
@ L= 5.0 mH
@ L= 5.0 mH
@ L= 5.0 mH
@ TC = 25ºC
Symbol
VDSS
VGS
ID1
ID2
IAR
EAR
EAS
PD
TOP & TSTG
R0JC
Value
-100
±20
10
7
9.8
5.2
320
75
-55 to +150
1.65
Units
V
V
A
A
mJ
mJ
W
ºC
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
SUFFIX JDB
SUFFIX JUB
DATA SHEET #: FT0013A
DOC
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