SFT8600S.5 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – NPN Transistor

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
FEATURES:
• BVCEO minimum 400 volts
• Very Low Saturation Voltage
• Very Low Leakage
• High Gain from 20 mA to 250 mA
• 200° C Operating, Gold Eutectic Die Attach
• Superior Performance over JEDEC 2N5010-15 Series
• High Speed Switching tf = 0.4µS TYP
SFT8600S.5
1 AMP
1000 Volts
NPN Transistor
Maximum Ratings
Collector – Emitter Voltage
(RBE = 1KΩ)
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC = 25º C
Derate above 175º C
Operating and Storage Temperature
Thermal Resistance, Junction to Case
CASE OUTLINE: SMD.5
.304
.288
3x
.020
.010
.030 MIN
.030 MIN
.408
.392
.304
.145
.288
.115
Symbol
V_CEO
V_CER
V_CBO
V_EBO
I_C
I_B
P_D
Tj, Tstg
R_?JC
Value
400
1000
1000
6
1
100
5.0
200
-65 to +200
5
Units
V
V
V
A
mA
W
mW/ºC
ºC
ºC/W
2x
.103
.087
.128
.112
All dimensions are in inches
Tolerances:
(unless otherwise specified)
XX: ±0.01”
XXX: ±0.005”
.233
.217
2x .010
MAX
PACKAGE OUTLINE:
SMD.5
PINOUT:
PIN 1: COLLECTOR
PIN 2: EMITTER
PIN 3: BASE
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0083A
DOC