SFT8600 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 1 AMP 1000 VOLTS NPN TRANSISTOR

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
FEATURES:
• BVCEO to 400 volts
• Very Low Saturation Voltage
• Very Low Leakage
• High Gain from 20 mA to 250 mA
• 200° C Operating, Gold Eutectic Die Attach
• Superior Performance over JEDEC 2N5010-15 Series
• High Speed Switching tf = 0.4µS TYP
SFT8600
1 AMP
1000 Volts
NPN Transistor
Maximum Ratings
Collector – Emitter Voltage
(RBE = 1KΩ)
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC = 100º C
Derate above 25º C
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Symbol
V_CEO
V_CER
V_CBO
V_EBO
I_C
I_B
P_D
Tj, Tstg
R_θJC
Value
400
1000
1000
6
1
100
2.0
2.0
-65 to +200
30
CASE OUTLINE: TO-5
FIGURE 1
OUTLINE AND DIMENSIONS
Units
V
V
V
A
A
W
mW/ºC
ºC
ºC/W
All dimensions are in inches
Tolerances:
(unless otherwise specified)
XX: ±0.01”
XXX: ±0.005”
Pin 1: Emitter
Pin 2: Base
Pin 3: Collector
Case: Collector
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: XN0033 G
DOC