SFT8600-5 Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – NPN Transistor

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFT8600 __ __
│ └ Screening ^2/
│
__ = Not Screened
│
TX = TX Level
│
TXV = TXV Level
│
S = S Level
└ Package
/5 = TO-5
SFT8600/5
1 AMP
1000 Volts
NPN Transistor
FEATURES:
 BVCEO to 400 volts
 Very Low Saturation Voltage
 Very Low Leakage
 High Gain from 20 mA to 250 mA
 200°C Operating, Gold Eutectic Die Attach
 Superior Performance over JEDEC 2N5010-15
Series
 High Speed Switching tf = 0.4µS TYP
Maximum Ratings
Collector – Emitter Voltage
(RBE = 1KΩ)
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC = 100º C
Derate above 25º C
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Symbol
V_CEO
V_CER
V_CBO
V_EBO
I_C
I_B
P_D
Tj, Tstg
R_θJC
Value
400
1000
1000
6
1
100
3.3
33
-65 to +200
30
Units
V
V
V
A
mA
W
mW/ºC
ºC
ºC/W
NOTES:
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
TO-5 (/5)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: XN0033J
DOC