SFT8600-4 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 1 AMP 1000 VOLTS NPN TRANSISTOR

PRELIMINARY
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: [phone] * Fax: [phone]
DESIGNER'S DATA SHEET
FEATURES:
• BVCER to 1000 volts
• Very Low Saturation Voltage
• Very Low Leakage
• High Gain from 20 mA to 250mA
• Gold Eutectic Die Attach
• Superior Performance over JEDEC 2N5010-15 Series
• High Speed Switching tf = 0.4:s TYP
SFT8600/4
1 AMP
1000 VOLTS
NPN TRANSISTOR
CLCC-4
MAXIMUM RATINGS
Collector-Emitter Voltage
( R_BE = 1kS)
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T_C = 25^oC
@ T_A = 25^oC
Derate above @ T_C = 25^oC
Operating and Storage Temperature
Thermal Resistance,
Junction to Case
Junction to Ambient
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage
((II_CC
=
=
10mAdc)
20:Adc,
R_BE
=
1kS)
Collector-Base Breakdown Voltage
(I_C = 20:Adc)
Emitter-Base Breakdown Voltage
(I_E = 20:Adc)
Collector Cutoff Current
(V_CB = 800Vdc)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
SYMBOL
V_CEO
V_CER
V_CBO
V_EBO
I_C
I_B
P_D
T_J, T_STJ
R_2JC
SYMBOL
BV_CEO
BV_CER
BV_CBO
BV_EBO
I_CBO
VALUE
400
1000
1000
UNITS
Volts
Volts
6
Volts
1
Amps
100
1.0
0.4
5.7
-65 to +200
mA
W
W
mW/^oC
o_C
175
440
o_C/W
MIN
400
1000
1000
6
-
MAX UNITS
-
V
-
V
-
V
10
:A
DATA SHEET #: TR0003B