SFT6678_1 Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – NPN High Speed Power Transistor

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFT6678 M __ TX
│ │ └ Screening ^2/ __ = Not Screened
││
TX = TX Level
││
TXV = TXV Level
││
S = S Level
│ └ Lead Bend ^3/ _ = Straight Leads
│
UB = Up Bend
│
DB = Down Bend
└ Package M = TO-254
Z = TO-254Z
/3 = TO-3
Maximum Ratings
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Continuous Collector Current
Continuous Base Current
Operating and Storage Temperature
Total Power Dissipation
@ T_C=25°C
@ T_A=25°C
Maximum Thermal Resistance
(Junction to Case)
(Ambient to Case)
TO-254 (M)
TO-254 (Z)
SFT6678 SERIES
15 AMPS
400 Volts
NPN High Speed
Power Transistor
Application Notes:
• Replaces Industry Standard 2N6678
• Designed for High Voltage, High Speed,
Power Switching Applications Such as:
• Off-Line Supplies
• Converter Circuits
• Pulse Width Modulated Regulators
• Motor Controls
• Deflection Circuits
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
T_J, T_STG
P_D
R_0JC
R_0JA
Value
400
650
8.0
15
5.0
-65 to +200
175
6.0
1.0
29.17
Units
Volts
Volts
Volts
Amps
Amps
°C
W
W
ºC/W
TO-3 (/3)
NOTES:
* Pulse Test: Pulse Width = 300 µs, Duty Cycle < 2%
1/ For ordering information, price, and availability contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Up and down bend configurations available for M and Z (TO-254 and TO-254Z) packages only.
4/ All electrical characteristics @ 25°C, unless otherwise specified.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0019D
DOC