English
Language : 

SFT6650-3 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 10 AMP / 80 Volts 50 MHz PNP POWER DARLINGTON BIPOLAR TRANSISTOR
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
TO-3
SFT6650/3
10 AMP / 80 Volts
50 MHz
PNP POWER DARLINGTON
BIPOLAR TRANSISTOR
Features:
• Low Saturation Voltage
• Hermetically Sealed, Isolated Package
• Direct Replacement for 2N6650
• TX, TXV, S-Level Screening Available,
Equivalent to MIL-PRF-19500/527
Maximum Ratings
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Continuous Collector Current
Maximum Base Current
Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
@ TA = 25ºC
@ TC = 25ºC
Symbol
VCEO
VCBO
VEBO
IC
IB
PD1
PD2
Top & Tstg
RθJC
TO-3
Ø.875 MAX
.450
.135
.250
MAX
2x .312
MIN
2x
.043
.038
2x Ø..116551
.525 MAX
SEATING PLANE
1
.675
.655
2x R.188 MAX
Value
80
80
5
10
0.25
5
85
-65 to +175
1.76
Units
Volts
Volts
Volts
Amps
Amps
W
ºC
ºC/W
.440
.420
2x
.225
.205
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
2
1
1.197
1.177
NOTES:
1 THIS DIMENSION SHALL BE MEASURED
AT POINTS .050 - .055" BELOW THE
SEATING PLANE. WHEN GAGE IS NOT
USED, MEASUREMENT WILL BE MADE AT
SEATING PLANE.
THIS OUTLINE DOES NOT MEET THE
MINIMUM CRITERIA ESTABLISHED
BY JS-10 FOR REGISTRATION.
DATA SHEET #: TR0089A
DOC