SFT5926-63 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – POWER TRANSISTOR SILICON NPN

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFT5926
__ __
│ └ Screening ^2/ __ = Not Screened
│
TX = TX Level
│
TXV = TXV Level
│
S = S Level
│
└ Package
/63 = TO-63
SFT5926/63
150V, 100 AMP
POWER TRANSISTOR
SILICON NPN
350 WATTS
Features:
• High Frequency transistor with BVCEO to 120 Volts
• Enhanced SOA capability and Fast Switching
• High Power Dissipation: 350 Watts
• 200°C Operating Temperature
• Replacement for 2N5926
• TX, TXV, S-Level Screening Available^2/ - Consult
Factory
Maximum Ratings
Symbol
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
Operating & Storage Temperature
Maximum Thermal Resistance
V_CEO
V_CBO
V_EBO
I_C
I_B
P_D
Top & Tstg
Junction to Case
R_θJC
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For ordering information, price, operating curves, and availability contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25ºC.
TO-63
Value
120
150
10
100
20
350
2
-65 to +200
0.5
Units
Volts
Volts
Volts
Amps
Amps
W
W/ºC
ºC
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0115A
DOC