SFT5671 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 30 - 50 AMPS 90 - 130 Volts High Power NPN Transistors

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFT5671 __ __ __
SFT5672 __ __ __
SFT5672E __ __ __
│ │ └ Screening __ = No Screening
││
TX = TX Level
││
TXV = TXV Level
││
S = S Level
│ └ Lead Bend ^{3/ 4/} __ = Straight Leads
│
UB = Up Bend
│
DB = Down Bend
└ Package ^3/ /3 = TO-3
M = TO-254
S1 = SMD 1
Maximum Ratings
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
TO-3 (/3)
TO-254 (M)
SFT5671 and SFT5672
SFT5672E
30 – 50 AMPS
90 - 130 Volts
High Power
NPN Transistors
Features:
• High Frequency transistor with BV_CEO to 130 Volts
• Enhanced SOA capability and Fast Switching
• High Power Dissipation 140 Watts
• 200^oC Operating Temperature
• TX, TXV, S-Level Screening per MIL-PRF-19500
available; consult factory
• Enhanced performance version: SFT5672E
SFT5671
SFT5672
SFT5672E
SFT5671
SFT5672
SFT5672E
SFT5671, SFT5672
SFT5672E
TO-3 (T_C ≤ 25ºC)
TO-254 (T_C ≤ 25ºC)
SMD 1 (T_C ≤ 25ºC)
TO-3
TO-254
SMD 1
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
P_D
T_J & T_STG
R_0JC
Value
90
120
130
120
150
250
7
30
50
10
140
116
175
-65 to +200
1.25
1.5
1.0
Units
Volts
Volts
Volts
Amps
Amps
Watts
ºC
ºC/W
SMD 1(S1)
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
3/ For Package Outlines Contact Factory.
4/ Up and Down Bend Configurations are Available for ‘M’ (TO-254) Packages Only.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0076C
DOC