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SFT5666-39 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 5 AMP 180 VOLTS HIGH SPEED NPN TRANSISTOR
SOLID STATE DEVICES, INC.
14830 Valley View Avenue * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET
FEATURES:
• High Performance replacement for 2N5666
• Radiation Tolerant
• Faster Switching, t(on)< 150ns
• Higher Frequency, ft > 30MHz
• Higher gain, 40 @ 5A
• Lower Saturation Voltage, 1.5v @ 5A
• 200oC Operating, Gold Eutectic Die Attach
• PNP Compliment available - contact the factory
MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC=100oC
Operating and Storage Temperature
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC =30mADC)
Collector-Base Breakdown Voltage
(IC =200uADC)
Emitter-Base Breakdown Voltage
(IE =200uADC)
Collector Cutoff Current
(VCB =180VDC)
Collector Cutoff Current
(VCE =120VDC)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
SFT5666/39
5 AMP
180 VOLTS
HIGH SPEED
NPN TRANSISTOR
TO-39
SYMBOL
VCEO
VCBO
VEBO
IC
IB
PD
TJ, TSTG
VALUE
180
200
6
5
1
15
UNITS
Volts
Volts
Volts
Amps
Amps
W
-65 to +200
oC
R0JC
20
oC/W
SYMBOL
BVCEO
BVCBO
BVEBO
ICBO
ICEO
MIN
180
200
6
-
-
MAX UNITS
-
V
-
V
-
V
2
µA
10
µA
DATA SHEET #:
TR0027A