SFT5013-4_1 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – NPN Transistor

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFT50 __ __ __
│ │ └ Screening ^2/
││
__ = Not Screened
││
TX = TX Level
││
TXV = TXV Level
││
S = S Level
│ └ Package
│
/39: TO-39 /5: TO-5 -4: LCC4
└ Family / Voltage
13 = 800V
14 = 900V
SFT5013-4 & SFT5014-4
SFT5013/5 & SFT5014/5
SFT5013/39 & SFT5014/39
0.5 AMP, 800 – 900 Volts
NPN Transistor
FEATURES:
 BVCER to 900 volts
 Low Saturation Voltage
 Low Leakage at High Temperature
 High Gain, Low Saturation
 200° C Operating, Gold Eutectic Die Attach
 2N5010 thru 2N5012 Also Available, Contact Factory
 TX, TXV, and S-Level Screening Available
Maximum Ratings
Collector – Emitter Voltage (R_BE= 1 kΩ)
Collector – Base Voltage
Emitter – Base Voltage
Collector – Emitter Breakdown Voltage
Peak Collector Current
Peak Base Current
Total Device Dissipation @ T_C= 25º C
@ T_A= 25º C
Derate above T_C= 25º C
@ T_C= 100º C
Derate above T_C= 100º C
Operating and Storage Temperature
Thermal Resistance, Junction to Case
5013
5014
5013
5014
5013
5014
-4
/39 & /5
Symbol
V_CER
V_CBO
V_EBO
BV_CEO
I_C
I_B
P_D
-4
/39 & /5
T_OP, T_STG
R_θJC / R_θJA
R_θJC
Value
800
900
800
900
5
300
400
0.5
250
1.0
2.0
20
2.0
20
-65 to +200
175 / 440
50 (typ 30)
Units
V
V
V
V
A
mA
W
W
mW/ºC
W
mW/ºC
ºC
ºC/W
Notes:
1/ For ordering information, price, operating curves, and
availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows
available on request.
3/ Unless otherwise specified, maximum ratings/electrical
characteristics at 25°C.
4/ Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%
4 PIN CLCC (LCC4)
TO-39
TO-5
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: XN0031H
DOC