SFT2010 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – High Energy NPN Transistor

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFT __ __ __ __
│ │ │ └ Screening ^2/ __ = No Screening
│ ││
TX = TX Level
│ ││
TXV = TXV Level
│ ││
S = S Level
│ │ _{└ Lead Bend} ^{3/ 4/} _{__ = Straight Leads}
││
│ └ _Package ^3/ _{/3 = TO-3 0.060” pin}
└ _{Voltage/Family 2010 = 100V}
2012 = 120V
2014 = 140V
SFT2010 thru SFT2014
200 AMP
100 – 140 Volt
High Energy
NPN Transistor
Features:
• BV_CBO = 250 V MIN
• 600 Watts Power Dissipation
• Excellent SOA Curve
• Es/b of 800mJ
• Gain of over 5 at 200A
• High Reliability Construction
• Planar Chip Construction with Low Leakage and
Very Fast Switching
• TX, TXV, S-Level Screening Available^2/ -
Consult Factory
Maximum Ratings
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Device Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
SFT2010
SFT2012
SFT2014
T_C=50ºC
Derate above 50ºC
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
P_D
T_J & T_STG
R_0JC
Value
100
120
140
250
8
200
75
600
4
-65 to +200
0.25
Units
Volts
Volts
Volts
Amps
Amps
Watts
W/ ºC
ºC
ºC/W
NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines Contact Factory.
4/ Up and Down Bend Configurations are Available for ‘M’ (TO-254) Packages Only.
5/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
TO-3
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0108A
DOC