SFS2326 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 1.6 AMPS 200 - 400 VOLTS SILICON CONTROLLED RECTIFIER

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Designer’s Data Sheet
FEATURES:
• Low-Level Gate Characteristics
• I_GT = 200 µA (Max) @ 25^oC
• Low Holding Current I^H = 1 mA (Max) @ 25^oC
• Anode Common to Case
• Hermetically Sealed
SFS2326 thru SFS2329
1.6 AMPS
200 ─ 400 VOLTS
SILICON CONTROLLED
RECTIFIER
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
Non-Repetitive Peak Reverse Blocking Voltage
(t < 5.0 ms)
RMS On-State Current
(All Conduction Angles)
Peak Non-Repetitive Surge Current
(One Cycle, 60 Hz, T_C = 80^oC )
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
SFS2326
SFS2327
SFS2328
SFS2329
SFS2326
SFS2327
SFS2328
SFS2329
Symbol
V_DRM
V_RRM
V_RSM
I_{T (RMS)}
Value
200
250
300
400
300
350
400
500
1.6
Units
Volts
Volts
Amps
I_TSM
P_GM
P_{G (AV)}
I_GM
V_GM
T_J
Tstg
R_θJC
15
Amps
0.1
0.01
0.1
6.0
-65 to +125
-65 to +150
30
Watts
Watts
Amps
Volts
o_C
o_C
o_C/W
DATA SHEET #: SCR004A
DOC