SFF80N10M Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
TO-254, TO254Z
Note 1: maximum current limited by package
configuration
SFF80N10M
SFF80N10Z
55 AMP (note 1) /100 Volts
12 mO
N-Channel Trench Gate MOSFET
TO-254 (SFF85N10M)
TO-254Z (SFF85N10Z)
Features:
• Trench gate technology for high cell density
• Lowest ON-resistance in the industry
• Enhanced operating temperature range
• Hermetically Sealed, Isolated Power Package
• Low Total Gate Charge
• Fast Switching
• Enhanced replacement for IRM150
• TX, TXV, S-Level screening available
• Improved (R_DS(ON) Q_G) figure of merit
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current (package limited)
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
@ T_C = 25ºC
@ T_C = 125ºC
@ T_C = 25ºC
@ T_C = 125ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ T_C = 25ºC
Junction to Case
Symbol
V_DSS
V_GS
I_D1
I_D2
I_D3
I_D4
I_AR
E_AR
P_D
T_OP & T_STG
R_0JC
Value
100
±20
55 (note 1)
55 (note 1)
110
70
75
280
250
-55 to +200
0.7
(typ 0.55)
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
TO-TO-254
PIN 3
PIN 2
PIN 1
PIN 3
PIN 2
PIN 1
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0019A
DOC