SFF75N10M Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 75 AMP 100 VOLTS 0.025 OHM N-Channel POWER MOSFET

SOLID STATE DEVICES, INC.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
DESIGNER'S DATA SHEET
FEATURES:
• Rugged construction with poly silicon gate
• low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input and transfer capacitance for easy paralleling
• Ceramic seals for improved hermeticity
• Hermetically sealed package
• TX, TXV and Space Level screening available
• Replaces: IXTH75N10Types
SFF75N10M
SFF75N10Z
75 AMP
100 VOLTS
0.025 Ω
N-CHANNEL
POWER MOSFET
TO-254 (M)
TO-254Z (Z)
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation
Repetitive Avalanche Energy
@ TC = 25^oC
@ TC = 55^oC
SYMBOL
V_DS
V_GS
I_D
T_op & T_stg
R_0JC
P_D
E_AR
VALUE
100
+ 20
56^1/
-55 to +150
0.83
150
114
30
UNIT
Volts
Volts
Amps
o_C
o_C/W
Watts
mJ
CASE OUTLINE: TO-254 (Sufix M)
Pin Out:
Ø..114399
Pin 1: Drain
Pin 2: Source
Pin 3: Gate .545
.535
.800
.790 _.545
.535
.500 MIN
PIN 3
PIN 2
.155
.145
.305
.295
PIN 1
3x Ø..004355
.675±.010
.260
.240
.155
.140
.050
.040
SUFFIX: M
CASE OUTLINE: TO-254Z (Sufix Z)
Pin Out:
Pin 1: Drain
2x Ø..115400
.545
.535
2x
.140
.125
.555
.500
Pin 2: Source
Pin 3: Gate
2x
.275
.255
2x
.155
.145
1.090 .820 .545
1.050 .790 .535
PIN 3
PIN 2
.305
.295
PIN 1
3x
.045
.035
SUFFIX: Z
.285
.265
.260
.240
.055
.035
2x
.275
.255
2x
.190
.150
.155
.135
.170
MIN
SUFFIX: MD
SUFFIX: MU
2x
.190
.150
Available with Glass or Ceramic Seals. Contact Factory for details.
SUFFIX: ZD
.170
MIN
SUFFIX: ZU
2x
.190
.150
NOTE: All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00153F