SFF40N30M Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – 40 AMP / 300 Volts 0.10 OHM N-Channel Power MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFF40N30 __ __ __
¦ ¦ + Screening ^2/ __ = Not Screen
¦¦
TX = TX Level
¦¦
TXV = TXV Level
¦¦
¦¦
S = S Level
¦ + Lead Option ^3/ __ = Straight Leads
¦
DB = Down Bend
¦
UB = Up Bend
¦
+ Package ^3/ M = TO-254
Z = TO-254Z
SFF40N30M
SFF40N30Z
40 AMP / 300 Volts
0.10 Ω
N-Channel Power MOSFET
Features:
• Rugged Construction with Polysilicon Gate Cell
• Low RDS(ON) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dV/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Ceramic Seals for Improved Hermeticity
• Hermetically Sealed Package
• TX, TXV, Space Level Screening Available
• Replacement for IXTH40N30 Types
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continuous Collector Current
Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
TO-254 (M)
Symbol
T_C = 25ºC
T_C = 55ºC
V_DS
V_GS
I_D
P_D
Top & Tstg
R_θJC
TO-254Z (Z)
Value
300
±20
40
150
114
-55 to +150
0.83
Units
Volts
Volts
Amps
W
ºC
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00141E
DOC