SFF25P20S2I Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 25 AMP / 200 Volts 125 mΩ P-Channel MOSFET

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
SMD 2 isolated
SFF25P20S2I
series
25 AMP / 200 Volts
125 mΩ
P-Channel MOSFET
NOTE: SEE DASH# DEFINITION TABLE FOR AVAILABLE
LEAD FORMING CONFIGURATION
Features:
• polySi gate cell structure
• Low ON-resistance
• UIS (unclamped inductive switching) rated
• Hermetically Sealed, Isolated Package
• Low package inductance
• Stress relief provided by flexible leads –
several options available
• Improved (R_DS(ON) Q_G) figure of merit
• TX TXV S Level screening available
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
Symbol
@ T_C = 25ºC
@ T_C = 25ºC
@ T_C = 25ºC
V_DSS
V_GS
I_D1
I_D3
I_AR
E_AR
P_D
T_OP & T_STG
Junction to Case
R_0JC
Value
-200
±20
25
95
25
30
250
-55 to +150
0.5
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
Electrical Characteristics (@25^oC, unless otherwise specified)
Symbol Min Typ Max Units
Drain to Source Breakdown Voltage
V_GS = 0V, I_D = 250µA BV_DSS
200 ––
––
V
Drain to Source On State Resistance
Gate Threshold Voltage
V_GS = 10V, I_D = 12A, Tj= 25^oC
V_GS = 10V, I_D = 25A, Tj= 25^oC
V_DS = V_GS, I_D = 250µA
R_DS(on)
V_GS(th)
––
––
110 120
125 ––
mΩ
3.0 –– 5.0
V
Gate to Source Leakage
Zero Gate Voltage Drain Current
V_GS = ±20V I_GSS
V_DS = 160V, V_GS = 0V, T_j = 25^oC
V_DS = 160V, V_GS = 0V, T_j = 125^oC
I_DSS
–– –– ±100 nA
–– –– 25 µA
–– ––
1
mA
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0009A
DOC