SFF24N50M Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – 24 AMP / 500 Volts 0.2 OHM N-Channel POWER MOSFET

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFF24N50 __ __ __
¦ ¦ + Screening ^2/ __ = Not Screen
¦¦
TX = TX Level
¦¦
TXV = TXV Level
¦¦
¦¦
S = S Level
¦ + Lead Option ^3/ __ = Straight Leads
¦
DB = Down Bend
¦
UB = Up Bend
¦
+ Package ^3/ M = TO-254
Z = TO-254Z
SFF24N50M
SFF24N50Z
24 AMP / 500 Volts
0.2 Ω
N-Channel MOSFET
Features:
• Rugged Construction with Polysilicon Gate Cell
• Low RDS(ON) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dV/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Ceramic Seals for Improved Hermeticity
• Hermetically Sealed Surface Mount Power Package
• TX, TXV, Space Level Screening Available
• Replacement for IXTH24N50 Types
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continuous Collector Current
Avalanche Current
Avalanche Energy
Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
TO-254 (M)
Symbol
Repetitive
Repetitive
Single Pulse
T_C = 25ºC
T_C = 55ºC
V_DS
V_GS
I_D
I_AR
E_AR
E_AS
P_D
Top & Tstg
R_θJC
TO-254Z (Z)
Value
500
±20
24
21
1
690
150
114
-55 to +150
0.83
Units
Volts
Volts
Amps
Amps
mJ
W
ºC
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00165F
DOC