SFF240J_1 Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – N-Channel Power MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information^1/
SFF240
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└ Screening^2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Pin Configuration
__ = Normal
R = Reverse
Package^3/
J = TO-257
SFF240J
SFF240JR
15 AMP, 200 Volts, 0.18 Ω
N-Channel Power MOSFET
Features:
 Rugged construction with polysilicon gate
 Low RDS(on) and high transconductance
 Excellent high temperature stability
 Very fast switching speed
 Fast recovery and superior dv/dt performance
 Increased reverse energy capability
 Low input and transfer capacitance for easy
paralleling
 Ceramic seals for improved hermeticity
 Hermetically sealed package
 TX, TXV, S-Level screening available
 Replaces: IRFY240 and 2N7219 Types
Maximum Ratings
Drain - Source Voltage
Gate - Source Voltage
Max. Continuous Drain Current (package
limited) @ 25ºC
Max. Instantaneous Drain Current (Tj limited)
T_C = 25ºC
Max. Avalanche current
Single Pulse Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
continuous
transient
Symbol
V_DS
V_GS
I_D1
@ L = 0.1 mH
@ L = 0.1 mH
@ T_C = 25ºC
@ T_C = 55ºC
I_D2
I_AS
E_AS
P_D
T_OP & T_STG
R_θJC
Value
200
±20
±30
15
16
15
450
63
48
-55 to +150
2
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Maximum current limited by package configuration
4/ Unless otherwise specified, all electrical characteristics @25^oC.
TO-257
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00111B
DOC