SDR8200S4_1 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – STANDARD RECOVERY HIGH CURRENT RECTIFIER

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information
SDR8200S
__ __ __
│ │ _{└ Screening} ^1/
│ │ __ = Not Screened
│ │ TX = TX Level
│ │ TXV = TXV
│ │ S = S Level
│ └ _{Package Type}
│
__ = DO-8
│
└ Voltage/Family
4 = 400V
6 = 600V
8 = 800V
10 = 1000V
12 = 1200V
SDR8200S4
thru
SDR8200S12
200 AMPS
400 ─ 1200 VOLTS
15 μsec
STANDARD RECOVERY
HIGH CURRENT RECTIFIER
FEATURES:
• Forward Current to 200 Amps
• PIV to 1200 Volts
• Transient Voltage Rating of 200 Volts Above PIV
• Single Chip Construction
• Hermetically Sealed
• For High Power Applications
• For Reverse Polarity Version Add Suffix “R”
• Fast Recovery Version Available
• TX, TXV, and Space Level Screening Available
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, T_A=25^oC)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T_A=25^oC)
Operating and Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
NOTES:
1/ Modified MIL-PRF-19500 Screening Flow – Consult Factory.
SDR8200S4
SDR8200S6
SDR8200S8
SDR8200S10
SDR8200S12
Symbol
V_RRM
V_RWM
V_R
I_O
Value
400
600
800
1000
1200
200
Unit
Volts
Amps
I_FSM
1400
Amps
T_OP & Tstg -55 to +175 ^oC
R_θJC
0.4
o_C/W
DO-8
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RP0013B
DOC