SDR620J Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 20A, 35nsec, 100-200 V Hyper Fast Rectifier

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information ^1/
SDR620 __ __ __ __
│
│
│
│
│
│
│
│
│
│
│
│
│
│
│
│
│
│
│
│
│
│
│
│
│
│
└ _{Screening 2/ __ = Not Screened}
│
TX = TX Level
│
TXV = TXV Level
│
S = S Level
└ Leg Bend Option __ = Straight
││
(See Figure 1) DB = Down Bend
││
UB = Up Bend
│ _└ Package J = TO-257
│
M = TO-254
│
Z = TO-254Z
└ _{Pin Configuration __ = Normal}
│
(See Table 1)
R = Reverse
└ _{Family/Voltage SDR620 = 100V}
SDR621 = 150V
SDR622 = 200V
SDR620J, M & Z
Thru
SDR622J, M & Z
20A, 35nsec, 100-200 V
Hyper Fast Rectifier
Features:
• Hyper Fast Recovery: 35nsec Maximum ^3/
• Low Reverse Leakage Current
• Low Junction Capacitance
• Hermetically Sealed Isolated Package
• Higher Voltages Available
• Available in Centertap Versions
• Replaces 1N5816 and 1N5816R
•
• TX, TXV, and S-Level Screening Available ^2/
Maximum Ratings ^4/
Symbol
Value
Units
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T_A = 25 °C)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T_A = 25 °C, per leg)
Operating & Storage Temperature
Maximum Total Thermal Resistance
Junction to Case
SDR620J, M & Z
SDR621J, M & Z
SDR622J, M & Z
V_RRM
V_RWM
V_R
Io
I_FSM
J (TO-257)
M (TO-254)
Z (TO-254Z)
T_OP & T_STG
R_θJC
100
150
200
20
300
-65 to +200
2.1
1.2
1.2
Volts
Amps
Amps
ºC
ºC/W
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: I_F = 500 mA, I_R = 1 Amp, I_RR = 250 mA.
4/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C.
TO-257 (J)
TO-254 (M)
TO-254Z (Z)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0031C
DOC