SDR3KHF Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 3 AMP 800 - 1200 V 35 nsec Hyper Fast Rectifier

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Features:
• Hyper Fast Recovery: 35 nsec maximum
• PIV to 1200 Volts
• Hermetically Sealed
• Void Free Construction
• For High Efficiency Applications
• Single Chip Construction
• Low Reverse Leakage
• TX, TXV, S Level screening Available
SDR3KHF & SDR3KHFSMS
thru
SDR3NHF & SDR3NHFSMS
3 AMP
800 - 1200 V
35 nsec
Hyper Fast Rectifier
Axial Lead Diode
SMS
Maximum Ratings
Peak Repetitive Reverse and DC Blocking Voltage
Average Rectified Forward Current
(Resistive Load, 60 hz Sine Wave, T_A = 25 °C)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T_A = 25 °C)
Operating & Storage Temperature
SDR3KHF
SDR3MHF
SDR3NHF
Maximum Thermal Resistance
Junction to Leads, L = 3/8
Junction to Tabs
Symbol
V_RRM
V_RSM
V_R
Io
I_FSM
T_OP & T_STG
R_?JE
Value
800
1000
1200
3.0
70
-65 to +175
20
14
Units
Volts
Amps
Amps
ºC
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0097A
DOC