SCR008_15 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – SILICON CONTROLLED RECTIFIER

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Designer’s Data Sheet
FEATURES:
• High Surge Current
• High On State Current
• High Frequency up to 400 Hz operation
• Anode Common to Case
• Hermetically Sealed
• Replacement for part number 2N884 thru 2N889
and 2N876 thru 2N881 devices.
• TX, TXV, S-Level Screening Available. Consult
Factory
SFS884 thru SFS889
20 AMPS
15 ─ 200 VOLTS
SILICON CONTROLLED
RECTIFIER
TO-18
MAXIMUM RATINGS (T_J = 25^oC UNLESS OTHERWISE NOTED, R_GK = 1K Ω)
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
Average On-State Current
Peak Recurrent Surge Current
(T_a ≤ 100^oC, tp = 0.2 ms, duty cycle = 0.1 % )
SFS884
SFS885
SFS886
SFS887
SFS888
SFS889
T_a = 30^oC
T_a = 100ºC
Peak Gate Current
Symbol
V_DRM
V_RRM
I_{F (AV)}
I_FSR
I_GM
Value
15
30
60
100
150
200
0.5
0.35
20
250
Peak Gate Voltage
V_GM
5
Operating Junction Temperature Range
T_J
-65 to +150
Storage Temperature Range
PACKAGE OUTLINE:
TO-18
T_stg
-65 to +150
.210
.170
.500 MIN
3
2
3x Ø..002116
Ø..100955
Ø..223009 Ø..119758
.030 MAX
45°
1
.046
.036
.048
.028
Units
Volts
Amps
Amps
mA
Volts
o_C
o_C