SCR006_15 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – FAST SWITCHING SILICON CONTROLLED RECTIFIER

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Designer’s Data Sheet
FEATURES:
• Low-Level Gate Characteristics
• I_GT = 200 µA (Max) @ 25^oC
• Low Holding Current I_H = 1 mA (Max) @ 25^oC
• Anode Common to Case
• Hermetically Sealed
• TX, TXV, S-Level Screening Available. Consult
Factory
SFS2510 thru SFS2540
25 AMPS
100 ─ 400 VOLTS
FAST SWITCHING
SILICON CONTROLLED
RECTIFIER
TO-48
MAXIMUM RATINGS (T_J = 25^oC UNLESS OTHERWISE NOTED, R_GK = 1K Ω)
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
Non-Repetitive Peak Reverse Blocking Voltage
(t ≤ 5.0 ms)
RMS On-State Current
(All Conduction Angles)
Average On-State Current
SFS2510
SFS2520
SFS2525
SFS2530
SFS2540
SFS2510
SFS2520
SFS2525
SFS2530
SFS2540
T_C = 50^oC
Peak Non-Repetitive Surge Current
(One Cycle, 60 Hz, T_J = 120^oC, t = 8.3 ms)
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case
Symbol
V_DRM
V_RRM
V_RSM
I_{T (RMS)}
I_{T (AV)}
I_TSM
P_GM
P_{G (AV)}
I_GM
V_GM
T_J
Tstg
R_θJC
Value
100
200
250
300
400
150
300
350
400
500
35
Units
Volts
Volts
Amps
25
Amps
210
Amps
60
1.0
10
15
-65 to +135
-65 to +150
1.45
Watts
Watts
Amps
Volts
o_C
o_C
o_C/W