SCR005_15 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – SILICON CONTROLLED

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Designer’s Data Sheet
FEATURES:
• Low-Level Gate Characteristics
• I_GT = 200 µA (Max) @ 25^oC
• Low Holding Current I_H = 1 mA (Max) @ 25^oC
• Anode Common to Case
• Hermetically Sealed
• TX, TXV, S-Level Screening Available. Consult
Factory
SFS1826 thru SFS1829
1.6 AMPS
200 ─ 400 VOLTS
SILICON CONTROLLED
RECTIFIER
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
Non-Repetitive Peak Reverse Blocking Voltage
(t < 5.0 ms)
RMS On-State Current
(All Conduction Angles)
Average On-State Current
Peak Non-Repetitive Surge Current
(One Cycle, 60 Hz, T_C = 80^oC )
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case
SFS1826
SFS1827
SFS1828
SFS1829
SFS1826
SFS1827
SFS1828
SFS1829
T_C = 50^oC
T_A = 25^oC
Symbol
V_DRM
V_RRM
V_RSM
I_{T (RMS)}
I_{T (AV)}
I_TSM
P_GM
P_{G (AV)}
I_GM
V_GM
T_J
Tstg
R_θJC
Value
200
250
300
400
300
350
400
500
1.6
1.0
0.7
15
Units
Volts
Volts
Amps
Amps
Amps
0.1
0.01
0.1
6.0
-65 to +200
-65 to +200
72
Watts
Watts
Amps
Volts
o_C
o_C
o_C/W