SAM20HF Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – HIGH VOLTAGE HYPER FAST RECTIFIER

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information ^1/
SAM __ HF __ __
││
││
││
││
│ └ Screening^2/ = None
│
TX = TX Level
│
TXV = TXV Level
│
S = S Level
│ │ ^{└ Package}
││
____ = Axial Leaded
││
SMS = Surface Mount Square Tab
│ ^{└ Recovery Time}
│
HF = Hyper Fast
└ Voltage
20 = 2000
25 = 2500
30 = 3000
SAM20HF – SAM30HF
and
SAM20HFSMS – SAM30HFSMS
1 Amp
2000 ─ 3000 VOLTS
30 nsec
HIGH VOLTAGE
HYPER FAST RECTIFIER
FEATURES:
 Hyper Fast Recovery: 30 nsec Maximum
 PIV to 3000 Volts
 Hermetically Sealed
 Void-Free Construction
 Metallurgically Bonded
 175°C Maximum Operating Temperature
 TX, TXV, and Space Level Screening Available ^2/
ELECTRICAL CHARACTERISTICS (at 25°C unless otherwise specified)
Part
Number
Peak
Inverse
Voltage
Average
Rectifier
Current
Maximum
Reverse
Current
Maximum
Forward
Voltage
Maximum
Surge
Current
(1 Cycle)
Maximum
Reverse
Recovery
Time
Symbol
PIV
I_O
I_R
V_F
Units
V
A
mA
μA
V
Conditions
SAM20HF
SAM25HF
SAM30HF
SAM20HFSMS
SAM25HFSMS
SAM30HFSMS
2000
2500
3000
2000
2500
3000
25°C
100°C
@ PIV
25°C
@ PIV
100°C
1
750 1.0 150
1
750 1.0 150
1
750 1.0 150
1
800 1.0 150
1
800 1.0 150
1
800 1.0 150
@1A
8.5
8.5
8.5
8.5
8.5
8.5
1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory.
2/ Screening based on MIL-PRF-19500. Screening flow available on request.
3/ Operating and testing over 10,000 V/inch may require encapsulation or immersion in a suitable
dielectric material.
4/ Max. forward voltage measured with instantaneous forward pulse of 300µsec minimum.
5/ Max. end tab temp. for soldering is 250°C for 5 sec maximum.
6/ Operating and storage temperature: -65°C to +175°C.
I_FSM
A
t_P= 8.3 ms
sine
25
25
25
25
25
25
t_RR
ns
I_F= .5 A
I_R= 1 A
I_RR= .25 A
30
30
30
30
30
30
Axial
Maximum
Junction
Capacitance
Typical
Thermal
Resistance
C_J
R_θJL / R_θJE
pF
°C/W
V_R= 100 V
f_T= 1 MHz
15
15
15
15
15
15
R_θJL: L=3/8”
R_θJE: L=0”
12
12
12
6
6
6
SMS
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0171A
DOC