RS0032C_15 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – Schottky Silicon Carbide

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SSR10C 30 S.5 TX
│ │ │ └ Screening __ = Not Screened
││ │
TX = TX Level
││ │
TXV= TXV Level
││ │
S = S Level
│ │ └ Package S.5 = SMD.5
││
G = Cerpack
││
│ └Configuration
│
└ Voltage 20 = 200 V
30 = 300 V
SSR10C30 Series
10 Amp, 300 Volts
Schottky Silicon Carbide
Features:
 High Voltage 300V
 Very High Operating Temperature, 250ºC
 No Recovery Time (tfr or trr)
 High Current Operation, 10A
 Hermetic Packaging
 TX, TXV, S Level screening available
Maximum Ratings^2/
Peak Repetitive and Peak Surge Reverse
Voltage
SSR10C20
SSR10C30
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave)
Non Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on I_O)
Power Dissipation
Operating & Storage Temperature^3/
Symbol
V_RRM
V_RSM
Io
I_FSM
P_D
Top & Tstg
Value
200
300
10
18
15
-55 to +250
Units
Volts
Amps
Amps
Watts
ºC
Maximum Thermal Resistance
Junction to Case
R_θJC
4.4
ºC/W
1
NOTES:
Cerpack (G)
1/ For ordering information, price, and availability, contact factory.
2/ All electrical characteristics @25oC unless otherwise specified.
3/ If high temperature operation is desired (> 175oC), consult
factory for soldering consideration.
SMD.5 (S.5)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0032C
DOC